| IXFN360N15T2 | ||
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| 产品描述：
N-Channel 150 V 1070 W 715 nC TranchT2 HiperFET Power MosFet SMT - SOT-227
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| 标准包装：10 | ||
| 数据手册： |
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| Number of Channels: | 1 Channel |
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| Packaging: | Tube |
| Manufacturer: | IXYS |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 10 |
| Brand: | IXYS |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Unit Weight: | 1.340411 oz |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 175 C |
| Fall Time: | 265 ns |
| Rds On - Drain-Source Resistance: | 4 mOhms |
| Series: | IXFN360N15 |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Tradename: | HiPerFET |
| Package / Case: | SOT-227-4 |
| Id - Continuous Drain Current: | 310 A |
| Rise Time: | 170 ns |
| Type: | GigaMOS Trench T2 HiperFet |
| Mounting Style: | SMD/SMT |
| ECCN | EAR99 |
| 数据手册： |
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