| IXFA7N100P | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Single N-Channel 1000 V 1.8 Ohm 47 nC 300 W MOSFET - TO-263
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Width: | 10.41 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 1.9 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-252-3 |
| Height: | 4.83 mm |
| Unit Weight: | 0.056438 oz |
| Fall Time: | 44 ns |
| Length: | 9.65 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 42 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 1000 V |
| Type: | Polar HiPerFET Power MOSFET |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 47 nC |
| Pd - Power Dissipation: | 300 W |
| Tradename: | Polar, HiPerFET |
| Vgs th - Gate-Source Threshold Voltage: | 6 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | SMD/SMT |
| Typical Turn-On Delay Time: | 25 ns |
| Forward Transconductance - Min: | 3.6 S |
| Series: | IXFA7N100 |
| Factory Pack Quantity: | 50 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 7 A |
| Rise Time: | 49 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：