| CSD19534Q5AT | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm
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| 标准包装：250 | ||
| 数据手册： -- |
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| Packaging: | Reel |
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| Qg - Gate Charge: | 17 nC |
| Pd - Power Dissipation: | 63 W |
| Package / Case: | VSON-8 |
| Vgs - Gate-Source Voltage: | 2.8 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 6 ns |
| Manufacturer: | Texas Instruments |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 20 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Transistor Type: | 1 N-Channel |
| Rds On - Drain-Source Resistance: | 14.1 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
| Unit Weight: | 0.000847 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 9 ns |
| Series: | CSD19534Q5A |
| Factory Pack Quantity: | 250 |
| Brand: | Texas Instruments |
| RoHS: | Details |
| Id - Continuous Drain Current: | 10 A |
| Rise Time: | 14 ns |
| Maximum Operating Temperature: | + 150 C |
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Supplier Stock
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| stock | 45150 | Update On 2025-05-27 |
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| Lead-Time | 5-7days | |
| SPQ/MOQ | 250/1000 | |
| Location | -- | |
| DateCode | 5年内 |
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