IRFSL4510PBF specifications -Ameya360 electronic components purchase network


IRFSL4510PBF

ACTIVE
Product description : MOSFET N-CH 100V 61A TO262
SPQ：50
Datasheet : IRFSL4510PBF.pdf

Packaging:	Tube
Qg - Gate Charge:	58 nC
Pd - Power Dissipation:	140 W
Package / Case:	TO-262-3
Configuration:	Single
Unit Weight:	0.073511 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	13 ns
Manufacturer:	Infineon
Factory Pack Quantity:	50
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	61 A
Rise Time:	32 ns
Maximum Operating Temperature:	+ 175 C
Rds On - Drain-Source Resistance:	13.9 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	4 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	28 ns
Forward Transconductance - Min:	100 S
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	28 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Transistor Type:	1 N-Channel

Datasheet： IRFSL4510PBF.pdf

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