IRF7483MTRPBF specifications -Ameya360 electronic components purchase network


IRF7483MTRPBF

ACTIVE EAR99
Product description : Single N-Channel 40 V 2.3 mOhm 81 nC HEXFET® Power Mosfet - DirectFET®
SPQ：4800
Datasheet : IRF7483MTRPBF.pdf

Packaging:	Reel
Qg - Gate Charge:	81 nC
Pd - Power Dissipation:	74 W
Package / Case:	DirectFET-4
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	25 ns
Forward Transconductance - Min:	125 S
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	39 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	40 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	2.3 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	15 ns
Manufacturer:	Infineon
Factory Pack Quantity:	4800
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	135 A
Rise Time:	53 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IRF7483MTRPBF.pdf

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Stock code :	884686
Mfg name :	Infineon Technologies
MPN :	IRF7483MTRPBF
Product description :	Single N-Channel 40 V 2.3 mOhm 81 nC HEXFET® Power Mosfet - DirectFET®

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