IRFH7787TRPBF specifications -Ameya360 electronic components purchase network


IRFH7787TRPBF

ACTIVE EAR99
Product description : Single N-Channel 75 V 8 mOhm 75 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
SPQ：1
Datasheet : IRFH7787TRPBF.pdf

Packaging:	Reel
Qg - Gate Charge:	110 nC
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	3.7 V
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	7.3 ns
Manufacturer:	Infineon
Factory Pack Quantity:	4000
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	68 A
Vds - Drain-Source Breakdown Voltage:	75 V
ECCN	EAR99
Rds On - Drain-Source Resistance:	6.6 mOhms
Pd - Power Dissipation:	83 W
Package / Case:	PQFN-8
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	12 ns
Forward Transconductance - Min:	110 S
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	53 ns
Product Category:	MOSFET
Rise Time:	16 ns
Transistor Type:	1 N-Channel

Datasheet： IRFH7787TRPBF.pdf

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Stock code :	881132
Mfg name :	Infineon Technologies
MPN :	IRFH7787TRPBF
Product description :	Single N-Channel 75 V 8 mOhm 75 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

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