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| 产品描述：
Single N-Channel 75 V 8 mOhm 75 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Reel |
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| Qg - Gate Charge: | 110 nC |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 3.7 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 7.3 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 4000 |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 68 A |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 6.6 mOhms |
| Pd - Power Dissipation: | 83 W |
| Package / Case: | PQFN-8 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 110 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 53 ns |
| Product Category: | MOSFET |
| Rise Time: | 16 ns |
| Transistor Type: | 1 N-Channel |
| 数据手册： |
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