| SI3900DV-T1-E3 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6
|
||
| 标准包装：3000 | ||
| 数据手册： -- | ||
| ECAD模型:
|
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Minimum Operating Temperature: | - 55 C |
|---|---|
| Packaging: | Reel |
| Product: | MOSFET Small Signal |
| Technology: | Si |
| Package / Case: | TSOP-6 |
| Configuration: | Dual |
| Unit Weight: | 0.000705 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 10 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SI3900DV-E3 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 2 A |
| Rise Time: | 30 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 125 mOhms |
| Width: | 1.65 mm |
| Pd - Power Dissipation: | 830 mW |
| Tradename: | TrenchFET |
| Height: | 1 mm |
| Vgs - Gate-Source Voltage: | 12 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 30 ns |
| Length: | 3.05 mm |
| Series: | SI3 |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Typical Turn-Off Delay Time: | 14 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Transistor Type: | 2 N-Channel |
| ECCN | EAR99 |
登录之后就可发表评论
