| IXGK100N170 | ||
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| 产品描述：
Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
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| 标准包装：1 | ||
| 数据手册： |
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| Collector-Emitter Saturation Voltage: | 2.5 V |
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| Packaging: | Tube |
| Minimum Operating Temperature: | - 55 C |
| Pd - Power Dissipation: | 830 W |
| Package / Case: | TO-264-3 |
| Configuration: | Single |
| Unit Weight: | 0.373904 oz |
| Length: | 20.29 mm |
| Manufacturer: | IXYS |
| Factory Pack Quantity: | 25 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 1.7 kV |
| Maximum Operating Temperature: | + 150 C |
| Width: | 5.31 mm |
| Continuous Collector Current at 25 C: | 170 A |
| Operating Temperature Range: | - 55 C to + 150 C |
| Gate-Emitter Leakage Current: | 200 nA |
| Height: | 26.59 mm |
| Mounting Style: | Through Hole |
| Continuous Collector Current Ic Max: | 600 A |
| Continuous Collector Current: | 170 A |
| Series: | IXGK100N170 |
| Brand: | IXYS |
| Product Category: | IGBT Transistors |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| ECCN | EAR99 |
| 数据手册： |
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