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| 产品描述：
JAN Series 50 V 800 mA Through Hole NPN Switching Silicon Transistor - TO-39-3
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- 规格参数
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| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
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| Power - Max | 800mW |
| Supplier Device Package | TO-39 |
| Part Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Through Hole |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 800mA |
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/251 |
| Current - Collector Cutoff (Max) | 10nA |
| Packaging | Bulk |
| Categories | Discrete Semiconductor Products |
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