SI3421DV-T1-GE3 specifications -Ameya360 electronic components purchase network


SI3421DV-T1-GE3

ACTIVE 6-TSOP EAR99
Product description : P-Channel 20 V 0.0192 Ohm 69 nC Surface Mount Power Mosfet - TSOP-6
SPQ：1
Datasheet : SI3421DV-T1-GE3.pdf

FET Feature	Standard
Package / Case	SOT-23-6 Thin, TSOT-23-6
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Digi-Reel®
Rds On (Max) @ Id, Vgs	19.2 mOhm @ 7A, 10V
Power - Max	4.2W
Supplier Device Package	6-TSOP
Gate Charge (Qg) @ Vgs	69nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	2580pF @ 15V
ECCN	EAR99

Datasheet： SI3421DV-T1-GE3.pdf

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Stock code :	872118
Mfg name :	Vishay
MPN :	SI3421DV-T1-GE3
Product description :	P-Channel 20 V 0.0192 Ohm 69 nC Surface Mount Power Mosfet - TSOP-6

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