| DMC1229UFDB-7 | ||
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| 产品描述：
DMC1229 Series 12 V 3.8 A Complementary Pair Enhancement Mode Mosfet-U-DFN2020-6
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Qg - Gate Charge: | 10.5 nC, 10.7 nC |
| Pd - Power Dissipation: | 1.4 W |
| Package / Case: | UDFN2020-6 Type B |
| Configuration: | 1 N-Channel, 1 P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 4.1 ns, 26.4 ns |
| Forward Transconductance - Min: | 5.5 S, 6.5 S |
| Series: | DMC1229 |
| Factory Pack Quantity: | 3000 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 3.8 A, 5.6 A |
| Rise Time: | 10.5 ns, 11.5 ns |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 29 mOhms, 61 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 1 V, 1 V |
| Vgs - Gate-Source Voltage: | +/- 8 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 5 ns, 5.7 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 16.6 ns, 27.8 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 12 V, 12 V |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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