NTMFS5C646NLT1G specifications -Ameya360 electronic components purchase network


NTMFS5C646NLT1G

ACTIVE
Product description : 60V,89A,4.7mOhm,Single N-Ch Power MOSFET
SPQ：1
Datasheet : NTMFS5C646NLT1G.pdf

Packaging:	Reel
Qg - Gate Charge:	15.7 nC
Pd - Power Dissipation:	66 W
Package / Case:	SO-8FL
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	5.1 ns
Manufacturer:	ON Semiconductor
Factory Pack Quantity:	1500
Typical Turn-Off Delay Time:	23.6 ns
Product Category:	MOSFET
Rise Time:	14.9 ns
Transistor Type:	1 N-Channel
Rds On - Drain-Source Resistance:	4.7 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	2 V
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	10.4 ns
Transistor Polarity:	N-Channel
Brand:	ON Semiconductor
RoHS:	Details
Id - Continuous Drain Current:	89 A
Vds - Drain-Source Breakdown Voltage:	60 V
Maximum Operating Temperature:	+ 150 C

Datasheet： NTMFS5C646NLT1G.pdf

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P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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Stock code :	852995
Mfg name :	onsemi
MPN :	NTMFS5C646NLT1G
Product description :	60V,89A,4.7mOhm,Single N-Ch Power MOSFET

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