FCU850N80Z specifications -Ameya360 electronic components purchase network


FCU850N80Z

ACTIVE IPAK (TO-251) EAR99
Product description : 800V, 6A, 850mΩ, N-Channel Power MOSFET
SPQ：1800
Datasheet : FCU850N80Z.pdf

FET Feature	Standard
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Part Status	Active
Manufacturer	Fairchild Semiconductor
Series	SuperFET® II
Vgs(th) (Max) @ Id	4.5V @ 600µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	850 mOhm @ 3A, 10V
Power - Max	75W
Supplier Device Package	IPAK (TO-251)
Gate Charge (Qg) @ Vgs	29nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	1315pF @ 100V
ECCN	EAR99

Datasheet： FCU850N80Z.pdf

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