| NSV1C201MZ4T1G | ||
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| 产品描述：
Hong Kong
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| 标准包装：1 | ||
| 数据手册： |
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| Emitter- Base Voltage VEBO: | 7 V |
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| Collector-Emitter Saturation Voltage: | 0.18 V |
| Packaging: | Reel |
| Continuous Collector Current: | 2 A |
| Series: | NSS1C201MZ4 |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 1000 |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - BJT |
| Gain Bandwidth Product fT: | 100 MHz |
| Unit Weight: | 0.008826 oz |
| Maximum Operating Temperature: | + 150 C |
| Maximum DC Collector Current: | 2 A |
| DC Current Gain hFE Max: | 360 |
| Collector- Base Voltage VCBO: | 140 V |
| Manufacturer: | ON Semiconductor |
| Pd - Power Dissipation: | 800 mW |
| Transistor Polarity: | NPN |
| Brand: | ON Semiconductor |
| Package / Case: | SOT-223-3 |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| 数据手册： |
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