| 2N6213 | ||
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| 产品描述：
2N Series 350 V 2 A PNP Through Hole Silicon Power Transistor - TO-66
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| 标准包装：30 | ||
| 数据手册： |
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| Maximum DC Collector Current: | 5 A |
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| Collector-Emitter Saturation Voltage: | 2 V |
| Packaging: | Tube |
| Continuous Collector Current: | 2 A |
| Manufacturer: | Central Semiconductor |
| Pd - Power Dissipation: | 35 W |
| Transistor Polarity: | PNP |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - BJT |
| Gain Bandwidth Product fT: | 20 MHz |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain hFE Max: | 100 at 1 A at 4 V |
| Collector- Base Voltage VCBO: | 400 V |
| DC Collector/Base Gain hfe Min: | 10 at 1 A at 4 V |
| Series: | 2N6213 |
| Minimum Operating Temperature: | - 65 C |
| Factory Pack Quantity: | 30 |
| Brand: | Central Semiconductor |
| Package / Case: | TO-66 |
| Collector- Emitter Voltage VCEO Max: | 350 V |
| Configuration: | Single |
| Maximum Operating Temperature: | + 200 C |
| 数据手册： |
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