| IRF3710LPBF | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-262
|
||
| 标准包装：1000 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Power - Max | 200W |
|---|---|
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 28A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| FET Feature | Standard |
| Supplier Device Package | TO-262 |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 3130pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：