Minimum Operating Temperature: | - 55 C |
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Rds On - Drain-Source Resistance: | 34 mOhms |
Pd - Power Dissipation: | 2.5 W |
Package / Case: | SOIC-8 |
Configuration: | Single |
Unit Weight: | 0.017870 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 8.4 ns |
Manufacturer: | Infineon |
Factory Pack Quantity: | 4000 |
Typical Turn-Off Delay Time: | 14 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 150 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Qg - Gate Charge: | 25 nC |
Packaging: | Reel |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | SMD/SMT |
Fall Time: | 8.3 ns |
Forward Transconductance - Min: | 8.2 S |
Transistor Polarity: | N-Channel |
Brand: | Infineon Technologies |
RoHS: | Details |
Id - Continuous Drain Current: | 5.1 A |
Rise Time: | 3.2 ns |
Maximum Operating Temperature: | + 150 C |
数据手册: |
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