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| 产品描述：
FET FDMS3606S DUAL-N FET HIGH-FET 13A
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 5 mm |
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| Rds On - Drain-Source Resistance: | 7.8 mOhms, 1.9 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V, 1.1 V |
| Configuration: | 2 N-Channel |
| Unit Weight: | 0.006032 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 8.2 ns, 15 ns |
| Forward Transconductance - Min: | 61 S, 154 S |
| Series: | PowerTrench |
| Factory Pack Quantity: | 3000 |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 13 A, 27 A |
| Rise Time: | 2.5 ns, 5.5 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Qg - Gate Charge: | 29 nC, 83 nC |
| Pd - Power Dissipation: | 2.2 W, 2.5 W |
| Package / Case: | Power56-8 |
| Height: | 1 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V, +/- 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 2.2 nS, 3.4 nS |
| Length: | 6 mm |
| Manufacturer: | Fairchild Semiconductor |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 20 ns, 36 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V, 30 V |
| Transistor Type: | 2 N-Channel |
| ECCN | ECL99 |
| 数据手册： |
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