CSD25310Q2 specifications -Ameya360 electronic components purchase network


CSD25310Q2

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Product description : SON 6/I°/20-V P-Channel NexFET Power MOSFET
SPQ：1
Datasheet : CSD25310Q2.pdf
ECAD Model:

Packaging:	Reel
Qg - Gate Charge:	3.6 nC
Pd - Power Dissipation:	2.9 W
Tradename:	NexFET
Vgs th - Gate-Source Threshold Voltage:	- 850 mV
Vgs - Gate-Source Voltage:	- 8 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	8 ns
Manufacturer:	Texas Instruments
Transistor Polarity:	P-Channel
Brand:	Texas Instruments
RoHS:	Details
Id - Continuous Drain Current:	- 9.6 A
Rise Time:	15 ns
Maximum Operating Temperature:	+ 85 C
Rds On - Drain-Source Resistance:	23.9 mOhms
Minimum Operating Temperature:	- 40 C
Technology:	Si
Package / Case:	WSON-FET-6
Configuration:	Single Channel
Mounting Style:	SMD/SMT
Fall Time:	5 ns
Forward Transconductance - Min:	34 S
Series:	CSD25310Q2
Factory Pack Quantity:	3000
Typical Turn-Off Delay Time:	15 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 20 V
Transistor Type:	1 P-Channel

Datasheet： CSD25310Q2.pdf

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Stock code :	818816
Mfg name :	Texas Instruments
MPN :	CSD25310Q2
Product description :	SON 6/I°/20-V P-Channel NexFET Power MOSFET

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