| CSD16570Q5BT | ||
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| 产品描述：
MOSFET N-CH 25V 100A 8VSON
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| 标准包装：250 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 192 nC |
| Pd - Power Dissipation: | 195 W |
| Tradename: | NexFET |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 72 ns |
| Manufacturer: | Texas Instruments |
| Transistor Polarity: | N-Channel |
| Brand: | Texas Instruments |
| RoHS: | Details |
| Id - Continuous Drain Current: | 456 A |
| Rise Time: | 43 ns |
| Maximum Operating Temperature: | + 85 C |
| Rds On - Drain-Source Resistance: | 590 uOhms |
| Minimum Operating Temperature: | - 40 C |
| Technology: | Si |
| Package / Case: | VSON-8 |
| Configuration: | Single |
| Unit Weight: | 0.000847 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 5 ns |
| Series: | CSD16570Q5 |
| Factory Pack Quantity: | 250 |
| Typical Turn-Off Delay Time: | 156 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Transistor Type: | 1 N-Channel |
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