| STGF10H60DF | ||
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| 产品描述：
STMicroelectronics STGF10H60DF, N沟道 IGBT 晶体管, 20 A, Vce=600 V, 1MHz, 3针 TO-220FP封装
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Collector-Emitter Saturation Voltage: | 1.5 V |
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| Continuous Collector Current Ic Max: | 10 A |
| Series: | 600-650V IGBTs |
| Continuous Collector Current at 25 C: | 20 A |
| Factory Pack Quantity: | 50 |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | 250 nA |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Unit Weight: | 0.081130 oz |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| ECCN | ECL99 |
| Packaging: | Tube |
| Manufacturer: | STMicroelectronics |
| Pd - Power Dissipation: | 30 W |
| Minimum Operating Temperature: | - 55 C |
| Brand: | STMicroelectronics |
| Package / Case: | TO-220-3 FP |
| Product Category: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 175 C |
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