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| 产品描述：
N-Channel 650 V 0.139 Ohm MDmesh V Power Mosfet - TO-220
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| 标准包装：1 | ||
| 数据手册： -- |
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| Pd - Power Dissipation: | 140 W |
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| Rds On - Drain-Source Resistance: | 125 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | TO-220-3 |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Manufacturer: | STMicroelectronics |
| Transistor Polarity: | N-Channel |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 22 A |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Maximum Operating Temperature: | + 150 C |
| Qg - Gate Charge: | 64 nC |
| Packaging: | Tube |
| Technology: | Si |
| Vgs - Gate-Source Voltage: | 25 V |
| Unit Weight: | 0.011640 oz |
| Fall Time: | 10 ns |
| Series: | N-channel MDmesh |
| Factory Pack Quantity: | 50 |
| Typical Turn-Off Delay Time: | 50 ns |
| Product Category: | MOSFET |
| Rise Time: | 8 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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