IRFSL7734PBF | ||
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Product description : Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - TO-262-3 | ||
SPQ:50 | ||
Datasheet : |
Packaging: | Tube |
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Qg - Gate Charge: | 180 nC |
Pd - Power Dissipation: | 290 W |
Package / Case: | TO-262-3 |
Configuration: | Single |
Unit Weight: | 0.073511 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 20 ns |
Manufacturer: | Infineon |
Factory Pack Quantity: | 50 |
Brand: | Infineon Technologies |
RoHS: | Details |
Id - Continuous Drain Current: | 183 A |
Rise Time: | 123 ns |
Maximum Operating Temperature: | + 175 C |
Rds On - Drain-Source Resistance: | 3.5 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 3.7 V |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | Through Hole |
Fall Time: | 100 ns |
Forward Transconductance - Min: | 250 S |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 124 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 75 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Datasheet: |
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Supplier Code:SP1027
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
stock | 39 | Update On 2022-12-02 |
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Lead-Time | 98Weeks | |
Supplier SPQ/MOQ | 50/1 | |
Location | -- | |
DateCode | 1914 |
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