IRFSL7734PBF
IRFSL7734PBF
  • ACTIVE
  • EAR99
Product description : Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - TO-262-3
SPQ:50
Datasheet :
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Packaging: Tube
Qg - Gate Charge: 180 nC
Pd - Power Dissipation: 290 W
Package / Case: TO-262-3
Configuration: Single
Unit Weight: 0.073511 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 20 ns
Manufacturer: Infineon
Factory Pack Quantity: 50
Brand: Infineon Technologies
RoHS:  Details
Id - Continuous Drain Current: 183 A
Rise Time: 123 ns
Maximum Operating Temperature: + 175 C
Rds On - Drain-Source Resistance: 3.5 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 3.7 V
Vgs - Gate-Source Voltage: 20 V
Mounting Style: Through Hole
Fall Time: 100 ns
Forward Transconductance - Min: 250 S
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 124 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 75 V
Transistor Type: 1 N-Channel
ECCN EAR99
Datasheet:
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Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$1.78963

14.86404

stock39Update On
2022-12-02
Lead-Time98Weeks
Supplier SPQ/MOQ50/1
Location--
DateCode1914

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