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| 产品描述：
Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - TO-262-3
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| 标准包装：50 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Tube |
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| Qg - Gate Charge: | 180 nC |
| Pd - Power Dissipation: | 290 W |
| Package / Case: | TO-262-3 |
| Configuration: | Single |
| Unit Weight: | 0.073511 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 20 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 50 |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 183 A |
| Rise Time: | 123 ns |
| Maximum Operating Temperature: | + 175 C |
| Rds On - Drain-Source Resistance: | 3.5 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 3.7 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 100 ns |
| Forward Transconductance - Min: | 250 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 124 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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