Rds On - Drain-Source Resistance: | 110 mOhms |
---|---|
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Vgs - Gate-Source Voltage: | +/- 30 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 29 ns |
Manufacturer: | Microsemi |
Factory Pack Quantity: | 45 |
Brand: | Microsemi |
RoHS: | Details |
Id - Continuous Drain Current: | 42 A |
Rise Time: | 35 ns |
Maximum Operating Temperature: | + 150 C |
Qg - Gate Charge: | 170 nC |
Pd - Power Dissipation: | 625 W |
Package / Case: | DPAK-3 |
Configuration: | 1 N-Channel |
Mounting Style: | SMD/SMT |
Fall Time: | 26 ns |
Forward Transconductance - Min: | 32 S |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 80 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Transistor Type: | 1 N-Channel |