CSD23202W10 specifications -Ameya360 electronic components purchase network


CSD23202W10

ACTIVE 4-DSBGA (1x1)
Product description : MOSFET P-CH 12V 2.2A 4DSBGA
SPQ：3000
Datasheet : CSD23202W10.pdf

FET Feature	Standard
Package / Case	4-UFBGA, DSBGA
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Part Status	Active
Manufacturer	Texas Instruments
Series	NexFET™
Vgs(th) (Max) @ Id	900mV @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Cut Tape (CT)
Rds On (Max) @ Id, Vgs	53 mOhm @ 500mA, 4.5V
Power - Max	1W
Supplier Device Package	4-DSBGA (1x1)
Gate Charge (Qg) @ Vgs	3.8nC @ 4.5V
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	512pF @ 6V

Datasheet： CSD23202W10.pdf

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