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| 产品描述：
Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W; D2PAK
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Width: | 9.65 mm |
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| Rds On - Drain-Source Resistance: | 1.2 Ohms |
| Pd - Power Dissipation: | 3.1 W |
| Package / Case: | TO-252-3 |
| Configuration: | Single |
| Unit Weight: | 0.050717 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 13 ns |
| Manufacturer: | Vishay |
| Factory Pack Quantity: | 1000 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 6.2 A |
| Rise Time: | 18 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 4.83 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 20 ns |
| Length: | 10.67 mm |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 55 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Transistor Type: | 1 N-Channel |
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