| Width: | 9.65 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 850 mOhms |
| Pd - Power Dissipation: | 3.1 W |
| Package / Case: | TO-252-3 |
| Configuration: | Single |
| Unit Weight: | 0.050717 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 11 ns |
| Manufacturer: | Vishay |
| Factory Pack Quantity: | 800 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 8 A |
| Rise Time: | 23 ns |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 4.83 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 19 ns |
| Length: | 10.67 mm |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 26 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Transistor Type: | 1 N-Channel |
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