ZXMN6A11DN8TA specifications -Ameya360 electronic components purchase network


ZXMN6A11DN8TA

ACTIVE EAR99
Product description : ZXMN6A11DN8 Series Dual 60 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
SPQ：500
Datasheet : ZXMN6A11DN8TA.pdf

Width:	4 mm
Rds On - Drain-Source Resistance:	180 mOhms
Pd - Power Dissipation:	2.1 W
Package / Case:	SOIC-8
Configuration:	Dual Dual Drain
Unit Weight:	0.002610 oz
Number of Channels:	2 Channel
Typical Turn-On Delay Time:	1.95 ns
Manufacturer:	Diodes Incorporated
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	8.2 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	60 V
Type:	MOSFET
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	1.5 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	4.6 ns
Length:	5 mm
Series:	ZXMN6A111
Factory Pack Quantity:	500
Brand:	Diodes Incorporated
RoHS:	Details
Id - Continuous Drain Current:	3.2 A
Rise Time:	3.5 ns
Transistor Type:	2 N-Channel
ECCN	EAR99

Datasheet： ZXMN6A11DN8TA.pdf

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Stock code :	782920
Mfg name :	Diodes Incorporated
MPN :	ZXMN6A11DN8TA
Product description :	ZXMN6A11DN8 Series Dual 60 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8

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