ZXMN10A25KTC
ZXMN10A25KTC
  • ACTIVE
  • EAR99
Product description : N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount -TO-252-3
SPQ:1
Datasheet :
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Width: 6.22 mm
Rds On - Drain-Source Resistance: 125 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 4 V
Configuration: Single
Mounting Style: SMD/SMT
Fall Time: 9.4 ns
Length: 6.73 mm
Series: ZXMN10A
Factory Pack Quantity: 2500
Brand: Diodes Incorporated
RoHS:  Details
Id - Continuous Drain Current: 6.4 A
Rise Time: 3.7 ns
Maximum Operating Temperature: + 150 C
Packaging: Reel
Qg - Gate Charge: 9.6 nC
Pd - Power Dissipation: 2.11 W
Package / Case: TO-252-2
Height: 2.39 mm
Vgs - Gate-Source Voltage: 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 4.9 ns
Manufacturer: Diodes Incorporated
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 17.7 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
Transistor Type: 1 N-Channel
ECCN EAR99
Datasheet:
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