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| 产品描述：
N-Channel 60 V 1 Ohm Enhancement Mode Vertical DMOS FET - TO-92
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| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Bulk |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 1.5A, 10V |
| Power - Max | 700mW |
| Supplier Device Package | TO-92-3 |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 100pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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