ZTX855 specifications -Ameya360 electronic components purchase network


ZTX855

ACTIVE EAR99
Product description : ZTX855 Series NPN 5 A 150 V Silicon Planar Medium Power Transistor - TO-92-3
SPQ：1
Datasheet : ZTX855.pdf

Collector-Emitter Saturation Voltage:	210 mV
Collector- Base Voltage VCBO:	250 V
Minimum Operating Temperature:	- 55 C
Package / Case:	TO-92
Gain Bandwidth Product fT:	90 MHz
Unit Weight:	0.016000 oz
Emitter- Base Voltage VEBO:	6 V
DC Current Gain hFE Max:	100 at 10 mA at 5 V
Length:	4.77 mm
Manufacturer:	Diodes Incorporated
Transistor Polarity:	NPN
Brand:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	2.41 mm
Packaging:	Reel
Pd - Power Dissipation:	1.2 W
Height:	4.01 mm
Configuration:	Single
Mounting Style:	Through Hole
Maximum DC Collector Current:	4 A
Continuous Collector Current:	4 A
DC Collector/Base Gain hfe Min:	100 at 10 mA at 5 V, 100 at 1 A at 5 V, 35 at 4 A at 5 V
Series:	ZTX855
Factory Pack Quantity:	4000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	150 V
ECCN	EAR99

Datasheet： ZTX855.pdf

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Stock code :	782326
Mfg name :	Diodes Incorporated
MPN :	ZTX855
Product description :	ZTX855 Series NPN 5 A 150 V Silicon Planar Medium Power Transistor - TO-92-3

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