ZTX853 specifications -Ameya360 electronic components purchase network


ZTX853

ACTIVE ECL99
Product description : ZTX853 Series NPN 4 A 100 V Silicon Planar Medium Power Transistor - TO-92-3
SPQ：4000
Datasheet : ZTX853.pdf

Collector-Emitter Saturation Voltage:	160 mV
Collector- Base Voltage VCBO:	200 V
Minimum Operating Temperature:	- 55 C
Package / Case:	TO-92
Gain Bandwidth Product fT:	130 MHz
Unit Weight:	0.016000 oz
Emitter- Base Voltage VEBO:	6 V
DC Current Gain hFE Max:	100 at 10 mA at 2 V
Length:	4.77 mm
Manufacturer:	Diodes Incorporated
Transistor Polarity:	NPN
Brand:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	2.41 mm
Packaging:	Reel
Pd - Power Dissipation:	1.2 W
Height:	4.01 mm
Configuration:	Single
Mounting Style:	Through Hole
Maximum DC Collector Current:	4 A
Continuous Collector Current:	4 A
DC Collector/Base Gain hfe Min:	100 at 10 mA at 2 V, 100 at 2 A at 2 V, 50 at 4 A at 2 V, 20 at 10 A at 2 V
Series:	ZTX853
Factory Pack Quantity:	4000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	100 V
ECCN	ECL99

Datasheet： ZTX853.pdf

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Stock code :	782325
Mfg name :	Diodes Incorporated
MPN :	ZTX853
Product description :	ZTX853 Series NPN 4 A 100 V Silicon Planar Medium Power Transistor - TO-92-3

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