SI7434DP-T1-GE3
  • 量产中
  • PowerPAK® SO-8
  • EAR99
产品描述:
MOSFET N-CH 250V 2.3A PPAK SO-8
标准包装:1
数据手册: --
  • 规格参数
  • 产品特性
  • 技术文档
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Power - Max 1.9W
Rds On (Max) @ Id, Vgs 155 mOhm @ 3.8A, 10V
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Part Status Active
Manufacturer Vishay Siliconix
Series TrenchFET®
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
ECCN EAR99
Package / Case PowerPAK® SO-8
FET Feature Standard
Supplier Device Package PowerPAK® SO-8
Gate Charge (Qg) @ Vgs 50nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Packaging Cut Tape (CT)
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