| SI7434DP-T1-GE3 | ||
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| Product description : MOSFET N-CH 250V 2.3A PPAK SO-8 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Power - Max | 1.9W |
|---|---|
| Rds On (Max) @ Id, Vgs | 155 mOhm @ 3.8A, 10V |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Part Status | Active |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| ECCN | EAR99 |
| Package / Case | PowerPAK® SO-8 |
| FET Feature | Standard |
| Supplier Device Package | PowerPAK® SO-8 |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Packaging | Cut Tape (CT) |
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