ZHB6718TA
  • 量产中
  • EAR99
产品描述:
ZHB6718 Series 20 V 2.5 A 2 NPN/2 PNP H-Bridge Bipolar Transistor - SOT-223-8
标准包装:1000
数据手册:
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Collector-Emitter Saturation Voltage: 130 mV
Collector- Base Voltage VCBO: 20 V
Minimum Operating Temperature: - 55 C
Package / Case: SM-8
Gain Bandwidth Product fT: 140 MHz
Mounting Style: SMD/SMT
Maximum DC Collector Current: 2.5 A
Continuous Collector Current: 2.5 A
DC Collector/Base Gain hfe Min: 200 at 10 mA at 2 V at NPN, 300 at 100 mA at 2 V at NPN, 200 at 2 A at 2 V at NPN, 300 at 10 mA at 2 V at PNP, 300 at 100 mA at 2 V at PNP, 150 at 2 A at 2 V at PNP, 35 at 4 A at 2 V at PNP
Series: ZHB6718
Factory Pack Quantity: 1000
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 20 V
ECCN EAR99
Width: 3.7 mm (Max)
Packaging: Reel
Pd - Power Dissipation: 2000 mW
Height: 1.6 mm (Max)
Configuration: Quad
Emitter- Base Voltage VEBO: 5 V
DC Current Gain hFE Max: 200
Length: 6.7 mm (Max)
Manufacturer: Diodes Incorporated
Transistor Polarity: NPN, PNP
Brand: Diodes Incorporated
Product Category: Bipolar Transistors - BJT
Maximum Operating Temperature: + 150 C
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