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| 产品描述：
Single N-Channel 200 V 6.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
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| 标准包装：3000 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| Power - Max | 43W |
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| Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.9A, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Part Status | Not For New Designs |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FET Feature | Standard |
| Supplier Device Package | D-Pak |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 300pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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