| VT6J1T2CR | ||
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| 产品描述：
http://www.ameya360.com/product/773749
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| 标准包装：8000 | ||
| 数据手册： |
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| Packaging: | Reel |
|---|---|
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 1 V, - 1 V |
| Vgs - Gate-Source Voltage: | +/- 10 V, +/- 10 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 46 ns, 46 ns |
| Series: | VT6J1 |
| Factory Pack Quantity: | 8000 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | +/- 100 mA, +/- 100 mA |
| Rise Time: | 62 ns, 62 ns |
| Maximum Operating Temperature: | + 150 C |
| FET Feature | Logic Level Gate, 1.2V Drive |
| FET Type | 2 P-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 10V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 120mW |
| Lead Free Status / RoHS Status | 1 |
| RoHS | Lead free / RoHS Compliant |
| Rds On - Drain-Source Resistance: | 40 Ohms, 40 Ohms |
| Pd - Power Dissipation: | 150 mW |
| Package / Case: | VMT-6 |
| Configuration: | 2 P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 137 ns, 137 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 325 ns, 325 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V, - 20 V |
| Transistor Type: | 2 P-Channel |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 3.8 Ohm @ 100mA, 4.5V |
| Supplier Device Package | VMT6 |
| Package / Case | 6-SMD, Flat Leads |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| 数据手册： |
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