VP2106N3-G specifications -Ameya360 electronic components purchase network


VP2106N3-G

ACTIVE BAG
Product description : Transistor: P-MOSFET; unipolar; -60V; -0.5A; 1W; TO92
SPQ：10000
Datasheet : VP2106N3-G.pdf

Packaging:	Bulk
Product:	MOSFET Small Signal
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	5.33 mm
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	5 ns
Length:	5.21 mm
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	5 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 60 V
Type:	FET
Maximum Operating Temperature:	+ 150 C
Package / Case	BAG
Width:	4.19 mm
Rds On - Drain-Source Resistance:	12 Ohms
Pd - Power Dissipation:	740 mW
Package / Case:	TO-92-3
Configuration:	Single
Unit Weight:	0.016000 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	4 ns
Manufacturer:	Microchip
Factory Pack Quantity:	1000
Brand:	Microchip Technology
RoHS:	Details
Id - Continuous Drain Current:	- 250 mA
Rise Time:	5 ns
Transistor Type:	1 P-Channel
SDP	3-TO-92

Datasheet： VP2106N3-G.pdf

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Stock code :	772900
Mfg name :	Microchip Technology
MPN :	VP2106N3-G
Product description :	Transistor: P-MOSFET; unipolar; -60V; -0.5A; 1W; TO92

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