VP2106N3-G
VP2106N3-G
  • ACTIVE
  • BAG
Product description : Transistor: P-MOSFET; unipolar; -60V; -0.5A; 1W; TO92
SPQ:10000
Datasheet :
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Packaging: Bulk
Product: MOSFET Small Signal
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 5.33 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: Through Hole
Fall Time: 5 ns
Length: 5.21 mm
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 5 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 60 V
Type: FET
Maximum Operating Temperature: + 150 C
Package / Case BAG
Width: 4.19 mm
Rds On - Drain-Source Resistance: 12 Ohms
Pd - Power Dissipation: 740 mW
Package / Case: TO-92-3
Configuration: Single
Unit Weight: 0.016000 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 4 ns
Manufacturer: Microchip
Factory Pack Quantity: 1000
Brand: Microchip Technology
RoHS:  Details
Id - Continuous Drain Current: - 250 mA
Rise Time: 5 ns
Transistor Type: 1 P-Channel
SDP 3-TO-92
Datasheet:
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stock31746Update On
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