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| 产品描述：
Transistor: N-MOSFET; unipolar; 240V; 1A; 1W; TO92
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 4.19 mm |
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| Rds On - Drain-Source Resistance: | 6 Ohms |
| Pd - Power Dissipation: | 1 W |
| Package / Case: | TO-92-3 |
| Configuration: | Single |
| Unit Weight: | 0.016000 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 8 ns |
| Manufacturer: | Microchip |
| Factory Pack Quantity: | 1000 |
| Brand: | Microchip Technology |
| RoHS: | Details |
| Id - Continuous Drain Current: | 900 mA |
| Rise Time: | 8 ns |
| Type: | FET |
| ECCN | ECL99 |
| Package / Case | BAG |
| Packaging: | Bulk |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 5.33 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 24 ns |
| Length: | 5.21 mm |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 23 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 240 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 150 C |
| SDP | 3-TO-92 |
| 数据手册： |
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