| US6M1TR | ||
|---|---|---|
|
||
|
||
| 产品描述：
http://www.ameya360.com/product/764688
|
||
| 标准包装：3000 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Qg - Gate Charge: | 1.4 nC, 2.1 nC |
|---|---|
| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Height: | 0.77 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 6 nS, 9 nS |
| Forward Transconductance - Min: | 1 S, 0.7 S |
| Series: | US6M1 |
| Factory Pack Quantity: | 3000 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 1.4 A |
| Rise Time: | 6 ns, 8 ns |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Power - Max | 1W |
| Lead Free Status / RoHS Status | 1 |
| Base Part Number | 6M1 |
| Rds On - Drain-Source Resistance: | 170 mOhms |
| Width: | 1.7 mm |
| Pd - Power Dissipation: | 1 W |
| Package / Case: | TUMT-6 |
| Configuration: | 1 N-Channel, 1 P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 8 ns, 10 ns |
| Length: | 2 mm |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 13 nS, 25 nS |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Type: | MOSFET |
| Maximum Operating Temperature: | + 150 C |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.4A, 10V |
| Supplier Device Package | TUMT6 |
| Package / Case | 6-SMD, Flat Leads |
| Current - Continuous Drain (Id) @ 25°C | 1.4A, 1A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS | Lead free / RoHS Compliant |
登录之后就可发表评论
请输入下方图片中的验证码：