IRLHS6276TRPBF
  • ACTIVE
  • 6-PQFN (2x2)
Product description : Dual N-Channel 20 V 45 mOhm 3.1 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
SPQ:1
Datasheet :
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FET Feature Logic Level Gate
Package / Case 6-VQFN
Power - Max 1.5W
Supplier Device Package 6-PQFN (2x2)
Gate Charge (Qg) @ Vgs 3.1nC @ 4.5V
FET Type 2 N-Channel (Dual)
Series HEXFET®
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 310pF @ 10V
RoHS Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs 45 mOhm @ 3.4A, 4.5V
PCN Assembly/Origin Mosfet Backend Wafer Processing 23/Oct/2013
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below
Design Resources IRLHS6276TR2PBF Saber Model IRLHS6276TR2PBF Spice Model
Family FETs - Arrays
Vgs(th) (Max) @ Id 1.1V @ 10µA
Packaging Tape & Reel (TR)  
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