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| 产品描述：
UMT1N Series 50 V 150 mA Dual PNP General Purpose Isolated Transistor-SOT-363
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Reel |
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| Width: | 1.25 mm |
| Pd - Power Dissipation: | 150 mW |
| Height: | 0.9 mm |
| Configuration: | Dual |
| Emitter- Base Voltage VEBO: | - 6 V |
| DC Current Gain hFE Max: | 560 |
| Continuous Collector Current: | - 150 mA |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | PNP |
| Brand: | ROHM Semiconductor |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | UMT6 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS | Lead free / RoHS Compliant |
| Collector- Base Voltage VCBO: | - 60 V |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | UM-6 |
| Gain Bandwidth Product fT: | 140 MHz |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 0.15 A |
| Length: | 2 mm |
| DC Collector/Base Gain hfe Min: | 120 |
| Series: | UMT1N |
| Factory Pack Quantity: | 3000 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | - 50 V |
| ECCN | EAR99 |
| Frequency - Transition | 140MHz |
| Current - Collector (Ic) (Max) | 150mA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Transistor Type | 2 PNP (Dual) |
| Power - Max | 150mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Base Part Number | *MT1 |
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