| Rds On - Drain-Source Resistance: | 60 mOhms |
|---|---|
| Width: | 4.7 mm |
| Pd - Power Dissipation: | 3.75 W |
| Tradename: | TrenchFET |
| Height: | 9.01 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | Through Hole |
| Fall Time: | 145 ns |
| Length: | 10.41 mm |
| Series: | SUP |
| Factory Pack Quantity: | 500 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 40 A |
| Rise Time: | 220 ns |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tube |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 22 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 40 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Transistor Type: | 1 N-Channel |
请输入下方图片中的验证码: