SS8050DBU specifications -Ameya360 electronic components purchase network


SS8050DBU

ACTIVE EAR99
Product description : 40V NPN Epitaxial Silicon Transistor
SPQ：1
Datasheet : SS8050DBU.pdf

Collector- Base Voltage VCBO:	40 V
Collector-Emitter Saturation Voltage:	0.5 V
Minimum Operating Temperature:	- 65 C
Package / Case:	TO-92
Gain Bandwidth Product fT:	100 MHz
Unit Weight:	0.006314 oz
Emitter- Base Voltage VEBO:	6 V
DC Current Gain hFE Max:	300
Length:	4.7 mm
Manufacturer:	Fairchild Semiconductor
Factory Pack Quantity:	10000
Part # Aliases:	SS8050DBU_NL
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	3.93 mm
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Height:	4.7 mm
Configuration:	Single
Mounting Style:	Through Hole
Maximum DC Collector Current:	1.5 A
Continuous Collector Current:	1.5 A
DC Collector/Base Gain hfe Min:	85
Transistor Polarity:	NPN
Brand:	Fairchild Semiconductor
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	25 V
ECCN	EAR99

Datasheet： SS8050DBU.pdf

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Stock code :	730079
Mfg name :	onsemi
MPN :	SS8050DBU
Product description :	40V NPN Epitaxial Silicon Transistor

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