SPP21N50C3XKSA1 specifications -Ameya360 electronic components purchase network


SPP21N50C3XKSA1

ACTIVE EAR99
Product description : Single N-Channel 500 V 190 mOhm 95 nC CoolMOS™ Power Mosfet - TO-220-3
SPQ：1
Datasheet : SPP21N50C3XKSA1.pdf

Qg - Gate Charge:	95 nC
Packaging:	Tube
Pd - Power Dissipation:	208 W
Tradename:	CoolMOS
Vgs th - Gate-Source Threshold Voltage:	3 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Fall Time:	4.5 ns
Forward Transconductance - Min:	18 S
Series:	CoolMOS C3
Factory Pack Quantity:	500
Part # Aliases:	SP000681066 SPP21N50C3 SPP21N50C3XK
RoHS:	Details
Id - Continuous Drain Current:	21 A
Rise Time:	5 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	190 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.211644 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	10 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	67 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	560 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： SPP21N50C3XKSA1.pdf

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Stock code :	726763
Mfg name :	Infineon Technologies
MPN :	SPP21N50C3XKSA1
Product description :	Single N-Channel 500 V 190 mOhm 95 nC CoolMOS™ Power Mosfet - TO-220-3

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