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| 产品描述：
HIGH POWER_LEGACY
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Tube |
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| Qg - Gate Charge: | 87 nC |
| Pd - Power Dissipation: | 208 W |
| Tradename: | CoolMOS |
| Configuration: | Single |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Forward Transconductance - Min: | 17.5 S |
| Series: | SPP20N65 |
| Factory Pack Quantity: | 500 |
| Part # Aliases: | SP000681064 SPP20N65C3 SPP20N65C3XK |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-220-3 |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 4.5 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 20.7 A |
| Rise Time: | 5 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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