SPI08N80C3 specifications -Ameya360 electronic components purchase network


SPI08N80C3

ACTIVE PG-TO262-3-1
Product description : 800V,650mΩ,8A,N-Channel Power MOSFET
SPQ：1
Datasheet : SPI08N80C3.pdf

Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
FET Feature	Standard
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	CoolMOS™
Vgs(th) (Max) @ Id	3.9V @ 470µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Tube
Rds On (Max) @ Id, Vgs	650 mOhm @ 5.1A, 10V
Power - Max	104W
Supplier Device Package	PG-TO262-3-1
Gate Charge (Qg) @ Vgs	60nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Through Hole
Input Capacitance (Ciss) @ Vds	1100pF @ 100V

Datasheet： SPI08N80C3.pdf

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