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| 产品描述：
800V,650mΩ,8A,N-Channel Power MOSFET
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| 标准包装：1 | ||
| 数据手册： |
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| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Vgs(th) (Max) @ Id | 3.9V @ 470µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 5.1A, 10V |
| Power - Max | 104W |
| Supplier Device Package | PG-TO262-3-1 |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V |
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