IRFR9N20DTRPBF specifications -Ameya360 electronic components purchase network


IRFR9N20DTRPBF

ACTIVE D-Pak
Product description : Single N-Channel 200V 0.38 Ohm 18 nC HEXFET® Power Mosfet - TO-252AA
SPQ：2000
Datasheet : IRFR9N20DTRPBF.pdf

FET Feature	Standard
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	9.4A (Tc)
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
Online Catalog	N-Channel Standard FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	5.5V @ 250µA
Packaging	Cut Tape (CT)
Rds On (Max) @ Id, Vgs	380 mOhm @ 5.6A, 10V
Power - Max	86W
Supplier Device Package	D-Pak
Gate Charge (Qg) @ Vgs	27nC @ 10V
FET Type	MOSFET N-Channel, Metal Oxide
Series	HEXFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	560pF @ 25V
RoHS	Lead free / RoHS Compliant

Datasheet： IRFR9N20DTRPBF.pdf

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Stock code :	7264
Mfg name :	Infineon Technologies
MPN :	IRFR9N20DTRPBF
Product description :	Single N-Channel 200V 0.38 Ohm 18 nC HEXFET® Power Mosfet - TO-252AA

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