| SISS23DN-T1-GE3 | ||
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| 产品描述：
Single P-Channel 20 V 4.8 W 300 nC Silicon SMT Mosfet - POWERPAK-1212-8
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Qg - Gate Charge: | 93 nC |
| Pd - Power Dissipation: | 57 W |
| Tradename: | TrenchFET |
| Vgs th - Gate-Source Threshold Voltage: | - 0.4 V to - 0.9 V |
| Vgs - Gate-Source Voltage: | 8 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 45 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 140 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Transistor Type: | 1 P-Channel |
| Rds On - Drain-Source Resistance: | 4.5 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | PowerPak1212-8 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 50 ns |
| Forward Transconductance - Min: | 44 S |
| Series: | SIS |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 50 A |
| Rise Time: | 50 ns |
| Maximum Operating Temperature: | + 150 C |
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