SI4943CDY-T1-E3 specifications -Ameya360 electronic components purchase network


SI4943CDY-T1-E3

ACTIVE 8-SO EAR99
Product description : Dual P-Channel 20 V 0.0192 Ω 62 nC Surface Mount Mosfet - SOIC-8
SPQ：1
Datasheet : SI4943CDY-T1-E3.pdf

Package / Case	8-SOIC (0.154", 3.90mm Width)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	8A
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-50°C ~ 150°C (TJ)
Packaging	Tape & Reel (TR)
Rds On (Max) @ Id, Vgs	19.2 mOhm @ 8.3A, 10V
Power - Max	3.1W
Supplier Device Package	8-SO
Gate Charge (Qg) @ Vgs	62nC @ 10V
Category	Discrete Semiconductor Products
FET Type	2 P-Channel (Dual)
Family	Transistors - FETs, MOSFETs - Arrays
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1945pF @ 10V
ECCN	EAR99

Datasheet： SI4943CDY-T1-E3.pdf

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Stock code :	715088
Mfg name :	Vishay
MPN :	SI4943CDY-T1-E3
Product description :	Dual P-Channel 20 V 0.0192 Ω 62 nC Surface Mount Mosfet - SOIC-8

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