| SI4463CDY-T1-GE3 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
P-Channel 60 V 0.008 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Qg - Gate Charge: | 54 nC |
|---|---|
| Packaging: | Reel |
| Pd - Power Dissipation: | 5 W |
| Tradename: | TrenchFET |
| Vgs th - Gate-Source Threshold Voltage: | - 0.6 V to - 1.4 V |
| Vgs - Gate-Source Voltage: | 12 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 60 S |
| Series: | SI4 |
| Factory Pack Quantity: | 2500 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 18.6 A |
| Rise Time: | 10 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 8 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | SOIC-8 |
| Configuration: | Single |
| Unit Weight: | 0.017870 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 12 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 70 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
| 数据手册： |
|---|
登录之后就可发表评论
库存信息4到货提醒
供应商编码:SP1036
线下原厂及原厂授权代理商库存，接单后需要再次确认价格和数量
$0.58081
￥4.824000089394690
查看价格阶梯
| 1+ | $0.58081 |
|---|---|
| 100+ | $0.48545 |
| 1250+ | $0.44066 |
| 2500+ | $0.40888 |
| 库存数量 | 4339 | 库存更新于 2025-02-19 |
|---|---|---|
| 订货周期 | -- | |
| Supplier SPQ/MOQ | 2500/1 | |
| 库存地 | -- | |
| 生产批次 | -- |
供应商编码:SP1027
线下原厂及原厂授权代理商库存，接单后需要再次确认价格和数量
$0.46794
￥3.88654
| 库存数量 | 暂无 |
|---|---|
| 订货周期 | -- |
| Supplier SPQ/MOQ | 1/17 |
| 库存地 | -- |
| 生产批次 | 1908 |
请输入下方图片中的验证码：