SI4463CDY-T1-GE3 specifications -Ameya360 electronic components purchase network


SI4463CDY-T1-GE3

ACTIVE EAR99
Product description : P-Channel 60 V 0.008 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
SPQ：1
Datasheet : SI4463CDY-T1-GE3.pdf

Qg - Gate Charge:	54 nC
Packaging:	Reel
Pd - Power Dissipation:	5 W
Tradename:	TrenchFET
Vgs th - Gate-Source Threshold Voltage:	- 0.6 V to - 1.4 V
Vgs - Gate-Source Voltage:	12 V
Mounting Style:	SMD/SMT
Fall Time:	11 ns
Forward Transconductance - Min:	60 S
Series:	SI4
Factory Pack Quantity:	2500
Brand:	Vishay Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	18.6 A
Rise Time:	10 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	8 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	SOIC-8
Configuration:	Single
Unit Weight:	0.017870 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	12 ns
Manufacturer:	Vishay
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	70 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 20 V
Transistor Type:	1 P-Channel
ECCN	EAR99

Datasheet： SI4463CDY-T1-GE3.pdf

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Stock code :	714990
Mfg name :	Vishay
MPN :	SI4463CDY-T1-GE3
Product description :	P-Channel 60 V 0.008 Ohm 5 W Surface Mount Power Mosfet - SOIC-8

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